| 摘要 |
A metal line of a semiconductor apparatus and a forming method thereof are provided to prevent metal diffusion of the metal line and generation of a void by forming a film having superior bonding ability and a film whose thermal expansive coefficient difference with respect to an interlayer dielectric is small, as a diffusion preventing layer. A semiconductor substrate(100) includes a conductor(102). A first diffusion preventing layer(104a) and a second diffusion preventing layer(104b) are formed on the semiconductor substrate. An interlayer dielectric(108) is formed on the second diffusion preventing layer and includes a trench(T) exposing the conductor. A metal line(110) is formed in order to gap-fill the trench. A thermal expansive coefficient difference of the second diffusion preventing layer with respect to the interlayer dielectric is smaller than that of the first diffusion preventing layer.
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