| 摘要 |
Laser crystallization equipment is provided to form a polysilicon layer by simultaneously performing a dehydrogenation process and a crystallization process in the same chamber after an amorphous silicon layer is formed. A laser apparatus irradiate a laser beam to a substrate. A gas tank(110) is installed in a process chamber(100), including a gas discharge part(112). A gas supply part injects gas to the gas tank. A temperature control system(130) controls the temperature of the gas so that a dehydrogenation process and a crystallization process are simultaneously performed on a thin film. The gas supply part includes a first gas supply part for supplying high temperature gas and a second gas supply part for injecting low temperature gas.
|
