| 摘要 |
A method for fabricating a CMOS image sensor is provided to prevent a photodiode from being exposed to a process capable of causing severe plasma damage in a process for a salicide process by varying a double photomask. A nitride layer for preventing salicidation is formed on a semiconductor substrate in which a photodiode is formed in each pixel region. A BARC(bottom anti-reflective coating) is formed on the nitride layer for preventing salicidation. A photoresist pattern is formed on the BARC by using a double photomask, covering the photodiode region of each pixel. The photoresist pattern can have an area not smaller than that of the photodiode. The BARC and the nitride layer for preventing salicidation are sequentially and partially etched back by using the photoresist pattern as an etch barrier. Salicide is selectively formed in a region except the photodiode.
|
