METHOD FOR MANUFACTURING MASKROM

摘要

A method for fabricating a mask ROM is provided to simplify a fabricating process and reduce a fabricating cost by avoiding formation of a layer for forming a base array in a code process of a mask ROM. A gate oxide layer(110) and a gate(120) are formed on a semiconductor substrate(100). A gap between the gates is filled with an insulation layer. A coding insulation layer(150) is formed on the gate and the insulation layer. The coding insulation layer is selectively removed to form an open region(180). Dopants are implanted into a portion exposed by the opening region. Spacers are formed on the sidewall of the open region.