METHOD OF MANUFACTURING PHOTORESIST PATTERNS

摘要

A method for forming a photoresist pattern is provided to improve reproducibility by optionally adjusting an interval or width of the photoresist patterns only through aligning of a reticle. A photoresist layer is formed on a semiconductor substrate(100), and a first reticle is positioned on the photoresist layer to expose a first region of the photoresist layer. The first region is irradiated with light having intensity lower than resolvable intensity. The first reticle is removed, and then a second reticle is disposed to expose a portion of the first region and a second region. The exposed portion of the first region and the second region are irradiated with the light. The photoresist layer is developed to form an overlapped portion(105-3) or photoresist pattern(150).