| 摘要 |
Non volatile memory device integrated on a semiconductor substrate (11) of a first type of conductivity comprising a matrix of non volatile memory cells (12) organised in rows, called word lines, and columns, called bit lines, the device comprising:
- a plurality of active areas (13) formed on the semiconductor substrate (11),
- the non volatile memory cells (12) being integrated in the plurality of active areas (13), each non volatile memory cell (12) comprising a source region, a drain region and a floating gate electrode coupled to a control gate electrode, a group (15) of the memory cells (12) sharing a common source line (16) of a second type of conductivity integrated in said semiconductor substrate (11).
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