| 摘要 |
A non volatile memory device is described being integrated on semiconductor substrate (11, 110) and comprising a matrix of non volatile memory cells (12, 120) organised in rows, called word lines, and columns, called bit lines, the device comprising:
- a plurality of active areas (13, 130) formed on the semiconductor substrate (11, 110) comprising a first and a second group (G1, G2; G3, G4) of active areas,
- the non volatile memory cells (12, 120) being integrated in the first group (G1, G3) of active areas, each non volatile memory cell (12, 120) comprising a source region, a drain region and a floating gate electrode coupled to a control gate electrode, at least one group (14, 140) of the memory cells (12, 120) sharing a common source region (15, 150) integrated on the semiconductor substrate (11, 110), the device being characterised in that:
- said plurality of active areas (13, 130) are equidistant from each other,
- a contact region (16, 160) is integrated in the second group (G2, G4) of active areas (13, 130) and is provided with at least one common source contact (17, 170) of said common source region (15, 150).
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