PRAM COMPRISING DOPED PHASE CHANGE LAYER AND METHOD OF OPERATING THE SAME

摘要

A phase change memory device having a doped phase change layer and its driving method are provided to reduce reset current, lower a melting point, and increase resistance of the device. A gate insulation layer(42) and a gate electrode(44) are formed on a substrate(40), and then a first interlayer dielectric(46) is formed on the substrate. A contact hole Is formed in the first interlayer dielectric, and the contact hole is filled with a conductive plug(50). A lower electrode(60) is formed on the first interlayer dielectric, and a second interlayer dielectric(62) is formed on the first interlayer dielectric. A phase change layer(66) doped with indium is formed on the second interlayer dielectric to cover an exposed surface of a lower electrode contact layer(64).