| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a plug from a SAC(Self Aligned Contact) fail and a short fail between plug gates by forming a gate pattern with a vertical profile, and to obtain a length margin of a sidewall spacer and process margin, and to prevent abnormal oxidation of tungsten, thereby improving the property of devices. A semiconductor substrate(31) includes a recess channel(32). A gate insulating layer(33) having a groove with predetermined depth on the surface is buried into the recess channel partially, and has a groove with predetermined depth on the surface. A gate electrode is formed in the groove of the gate insulating layer. A gate hard mask is formed on the gate insulation layer and the gate electrode.
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