发明名称 |
Monolithic semicondutor laser and method of manufacturing the same |
摘要 |
A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate (1); a first double hetero-structure (101) formed within a first area on the semiconductor substrate and having first clad layers (2,4) disposed above and below a first active layer (3); and a second double hetero-structure (102) formed within a second area on the semiconductor substrate and having second clad layers (2,4) disposed above and below a second active layer (13). The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials. |
申请公布号 |
EP1788679(A3) |
申请公布日期 |
2007.07.04 |
申请号 |
EP20070002825 |
申请日期 |
2004.09.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NISHIDA, TAKEHIRO;MIYASHITA, MOTOHARU;YAMAGUCHI, TSUTOMU |
分类号 |
H01S5/22;H01S5/40;H01S5/20;H01S5/223;H01S5/30;H01S5/323;H01S5/343 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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