| 摘要 |
A CMOS image sensor and its manufacturing method are provided to improve reaction at a low and high illumination by forming a gate electrode of a transfer transistor and forming a floating diffusion region between photodiode regions, and to extend the operation range by rising up a saturation level of the floating diffusion region. A CMOS image sensor comprises a transistor for transmitting electrons produced from a photodiode region to a floating diffusion region(109). A gate electrode of the transistor is a finger type and the floating diffusion region is formed between the photodiode regions. The transistor is a transfer or a reset transistor. A device isolation layer is formed on an isolation region of a semiconductor substrate which is defined by an active region and the isolation region. A first and second gate electrodes(104a,104b) having an uniform gap are formed on the active region by installing a gate insulating layer. The floating diffusion region is formed on the surface of the semiconductor substrate between the first and the second gate electrode. A first and second photodiode regions(106a,106b) are formed on the surface of the semiconductor substrate between the floating diffusion regions.
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