A PROTECTIVE LAYER, A IMAGE SENSER USING THE SAME, AND A METHOD FOR FABRICATING THE SAME

摘要

An image sensor using a protection layer of a semiconductor device is provided to prevent a peeling phenomenon in an insulation layer made of a nitride material by using a protection layer composed of an insulation layer made of a TEOS material and an insulation layer made of a nitride material. A plurality of transistors and a photodiode are formed in a substrate. A protection layer(41) is formed on the front surface of the substrate having the transistor and the photodiode to protect the transistor and the photodiode. A color filter layer is formed on the protection layer. A plurality of micro lenses are formed on the color filter layer. The protection layer includes a first insulation layer(41a) of a TEOS material and a second insulation layer(41b) made of a nitride material formed on the first insulation layer. A planarization layer can be formed between the color filter layer and the micro lens to planarize the color filter layer.