| 摘要 |
A method for fabricating a semiconductor device is provided to remove a defect source by reducing a pattern collapse in forming a cylindrical capacitor. A photoresist layer is formed on a wafer. The photoresist layer in a net-die region is exposed by a full-field exposure using a first exposure mask. An additional exposure process using a second exposure mask is performed in a region except the net-die region. By using the second exposure mask, a double exposure process is performed on the net-die region and a synthetic pattern(104) is formed. The synthetic pattern can have a greater DOF(depth of focus) in a region except the net-die region than in the net-die region.
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