Chemical mechanical polishing pad and chemical mechanical polishing method

摘要

A chemical mechanical polishing pad of the present invention has the following two groups of grooves on the polishing surface:
(i) a group of first grooves intersect a single virtual straight light extending from the center toward the periphery of the polishing surface and have a land ratio represented by the following equation of 6 to 30: Land ratio = P - W ÷ W (P is the distance between adjacent intersections between the virtual straight line and the first grooves, and W is the width of the first grooves); and
(ii) a group of second grooves extend from the center portion toward the peripheral portion of the polishing surface and consist of second grooves which are in contact with one another in the area of the center portion and second grooves which are not in contact with any other second grooves in the area of the center portion. The chemical mechanical polishing pad of the present invention has a high polishing rate and excellent in-plane uniformity in the amount of polishing of the surface to be polished even when the amount of an aqueous dispersion for chemical mechanical polishing is made small.