MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE

摘要

There are provided a magnetoresistive element and a magnetic memory device. It is possible to reduce the current for a magnetic domain wall movement and drive it at a room temperature in a current-induced single magnetic domain wall movement phenomenon. The magnetoresistive element includes at least: a magnetic wire (1) for forming a magnetic domain wall potential (7) bonding the single magnetic domain wall (2); magnetic field application means for generating a magnetic field for introducing the single magnetic domain wall (2) into the magnetic wire (1); and drive current application means for applying current (3) containing a resonance oscillation frequency component decided by the magnetic domain wall potential (7).