SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor light emitting device is provided to improve the electrical characteristic of a light emitting device by increasing the light emitting brightness of the light emitting device and by lowering the operation voltage of the light emitting device. An active layer(13) is formed on a substrate(10), including an undoped well layer, a first barrier layer and a second barrier layer. The well layer is formed between the first and the second barrier layers. The first barrier layer includes an n-type impurity doping region adjacent to the well layer and an undoped region separated from the well layer. The second barrier layer includes an undoped region adjacent to the well layer. The second barrier layer can have an n-type doped region separated from the well layer.