| 摘要 |
A method for fabricating a semiconductor device is provided to prevent a wet cleaning process from being not smoothly performed by a crosslink between boron ions and a hydroxy group existing in photoresist resist by forming a pattern while using photoresist resist not including a hydroxy group. An isolation layer(23) for defining an active region(21a) is formed on a semiconductor substrate(21). A polysilicon layer(25) is formed on the semiconductor substrate. A photoresist pattern is formed by using a photoresist composition including photoresist resin not including a hydroxy group, exposing the polysilicon layer positioned on the active region. The photoresist resin can be selected from a group of photoresist resin for i-line, photoresist resin for KrF and photoresist resin for ArF. B^3+ ions are implanted into the polysilicon layer by using the photoresist pattern as a mask. The photoresist pattern is removed by using O2 plasma. The surface of the polysilicon layer is cleaned by using a conventional cleaning solution.
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