| 摘要 |
A CMOS image sensor is provided to block the signal of an adjacent pixel by forming a contact plug in a manner that surrounds an adjacent photodiode region. An isolation layer is formed in an isolation region of a semiconductor substrate in which the isolation region and an active region are defined. Photodiode regions(PD) are formed at regular intervals in the active region of the semiconductor substrate, isolated by the isolation layer. An interlayer dielectric is formed on the front surface of the semiconductor substrate. A contact plug(206) is formed in the periphery of each photodiode region, penetrating the interlayer dielectric. A first planarization layer is formed on the front surface of the semiconductor substrate including the contact plug. A plurality of color filter layers are formed at regular intervals on the first planarization layer, corresponding to the photodiode region. A second planarization layer is formed on the resultant structure. A micro lens is formed on the second planarization layer, corresponding to each photodiode region. The contact plug can be made of an opaque metal layer, surrounding the photodiode region.
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