| 摘要 |
A method for fabricating a multilayered film of a semiconductor device is provided to prevent generation of cracks in a passivation layer of a multilayered structure composed of a passivation oxide layer and a passivation nitride layer by minimizing the stress of a multilayered film. A first layer is formed on a semiconductor substrate. A second layer is formed on the first layer. A stress-free metal layer is formed on the second layer. A third layer is formed on the stress-free metal layer. The thickness of the first and second layers is determined by measuring the stress of the first and second layers while varying the thickness of the third layer. The first layer can be a passivation oxide layer, and the second layer can be a passivation nitride layer.
|
