| 摘要 |
A dual zone thermal chemical vapor deposition apparatus capable of doping the synthesized nano-materials without exposing the nano-materials to the air after synthesizing nano-materials, and a method for thermal chemical vapor deposition of wanted materials, particularly nano-materials, and in situ doping of the synthesized nano-materials without exposing the nano-materials to the outside by using the apparatus are provided. A dual zone thermal chemical vapor deposition apparatus(1) for performing synthesis and in situ doping of materials comprises: a first reactor(2) for synthesizing a material layer on a substrate; a second reactor(3) for conducting a doping process; a connecting part(4) which includes a gate valve(5) for opening or closing the first and second reactors and connects the first and second reactors; a reaction gas supply part(7) for supplying a reaction gas into at least one of the first and second reactors; a doping gas supply part(8) for supplying a doping gas into the second reactor; a first heating means(10), and a first temperature control part(9); and a second heating means(12), and a second temperature control part(11), wherein the gate valve is closed during a material synthesizing process in the first reactor and a doping process in the second reactor such that the first and second reactors are cut off from each other, and the gate valve is opened such that the first and second reactors are connected to each other when the substrate is moved between the first and second reactors.
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