| 摘要 |
<p>A method for forming a thin film of a composite metal compound is described to be performed in an apparatus which comprises at least two film deposition process chambers (20, 40), each being independently enclosed by shield plates (31, 51), a reaction process chamber (60) having a radical source (61) for generating the activated species of a reactive gas, shield means (31, 51) for shielding said film deposition process chamber (20, 40), shield means (75) for shielding said reaction process chamber (60), a substrate on which a thin film is formed, and a transfer means (13) for sequentially and repeatedly transferring said substrate between thin film deposition positions for forming a thin film on said substrate by sputtering. The thin film deposition positions correspond to said film deposition process chambers (20, 40), and an exposure-to-radicals position for exposing a thin film to radicals of a reactive gas emitted from the radical source (61), which exposure-to-radicals position corresponds to the reaction process chamber (60), wherein a thin film of a composite metal compound is formed on said substrate through the sequentially repeated transfer of said substrate between the thin film deposition position and the exposure-to-radicals position. The thin film is formed to have any refractive index within the range between the optical refractive index intrinsic to a constituent metal compound of the thin film of a composite metal compound and the optical refractive index intrinsic to another constituent metal comment of the thin film. <IMAGE>A method for forming a thin film of a composite metal compound is described to be performed in an apparatus which comprises at least two film deposition process chambers (20, 40), each being independently enclosed by shield plates (31, 51), a reaction process chamber (60) having a radical source (61) for generating the activated species of a reactive gas, shield means (31, 51) for shielding said film deposition process chamber (20, 40), shield means (75) for shielding said reaction process chamber (60), a substrate on which a thin film is formed, and a transfer means (13) for sequentially and repeatedly transferring said substrate between thin film deposition positions for forming a thin film on said substrate by sputtering. The thin film deposition positions correspond to said film deposition process chambers (20, 40), and an exposure-to-radicals position for exposing a thin film to radicals of a reactive gas emitted from the radical source (61), which exposure-to-radicals position corresponds to the reaction process chamber (60), wherein a thin film of a composite metal compound is formed on said substrate through the sequentially repeated transfer of said substrate between the thin film deposition position and the exposure-to-radicals position. The thin film is formed to have any refractive index within the range between the optical refractive index intrinsic to a constituent metal compound of the thin film of a composite metal compound and the optical refractive index intrinsic to another constituent metal comment of the thin film. <IMAGE></p> |
