| 摘要 |
A method for forming a semiconductor device is provided to stably perform a C-halo ion implantation process while using lower ion implantation energy than conventional C-halo ion implantation energy by performing a C-halo ion implantation process after an oxide layer is previously formed on a first polysilicon layer. A first polysilicon layer(140) is formed on a semiconductor substrate(100) including an isolation layer(110) for defining an active region(120) after a recess gate region(130) is formed in the active region. An oxide layer is formed on the first polysilicon layer. A mask pattern is formed on the oxide layer, exposing a C-halo ion implantation region(165). A C-halo ion implantation process is performed on the semiconductor substrate by using the mask pattern. The mask pattern and the oxide layer pattern are removed. A second polysilicon layer(170) is formed on the first polysilicon layer. After a gate metal layer and a hard mask layer are formed on the resultant structure, a gate is formed.
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