| 摘要 |
A photo mask and a manufacturing method thereof are provided to improve quality of a photo mask and to minimize pattern line width measurement error by forming a plurality of dummy patterns on an exposure beam non-transmission region. A photo mask pattern(110) is formed on an exposure beam transmission region of a reticle(1). A plurality of dummy patterns(120) are formed on an exposure beam non-transmission region of the reticle in order to measure a line width of the photo mask pattern during the photo mask pattern is formed. The photo mask pattern and the dummy patterns are a halftone mask pattern, a phase shift pattern, or a binary pattern.
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