| 摘要 |
A method for forming a copper interconnection using a damascene process is provided to remove a defect by rinsing the defect, such as micro-bridge, to be formed after a planarization process. An interlayer dielectric(320) is formed on a substrate(300), and A photoresist pattern is formed on the substrate, and then the interlayer is etched to form a via hole and a trench. The photoresist pattern is removed through an ashing process. The silicon substrate is electrically plated to form a copper plating layer(370) in the via hole or trench. The copper plating layer is planarized to a surface of the interlayer dielectric, and then a defect is removed from the planarized surface.
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