METHOD FOR MANUFACTURING OF CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to prevent the bridge between adjacent microlenses due to a conventional heat treatment for performing a reflow process by using an Ar sputtering process capable of changing a trapezoid type structure of a microlens pattern into an oval type structure and a second microlens coating process. An interlayer dielectric(32) is formed on a semiconductor substrate with a plurality of photodiodes(31). A plurality of color filter layers(34) spaced apart from each other are formed on the interlayer dielectric. A planarization layer(35) is formed thereon. A microlens pattern(36) is formed on the planarization layer corresponding to each photodiode. An Ar sputtering process is performed on the microlens pattern to form a first microlens on the resultant structure. A second microlens is formed on the first microlens.