| 摘要 |
An integrated circuit and a method for using metal fill geometries to reduce the voltage drop in power meshes. Metal fill geometries are connected to the power mesh using vias or wires at multiple locations. Metal fill geometries are connected to other floating metal fill geometries using vias or wires at multiple locations. The circuit design introduces maximum redundancy between metal fill geometries and power mesh geometries, but partial redundancy between metal fill geometries and metal fill geometries. In particular, the redundancy in connectivity between metal fill geometries and metal fill geometries is kept minimal to reduce the number of geometries introduced. The high redundancy between metal fill geometries and power mesh geometries and the partial redundancy among metal fill geometries result in a smaller IR-drop by reducing the effective resistance on a power mesh. Hence, the invention use redundancy carefully and advantageously to achieve simultaneous metal density and IR-drop optimization without introducing excessive number of metal fill geometries. |
