| 摘要 |
A fabricating method of a thin film transistor array substrate is provided to carry out baking by additionally doping second photoresist after depositing a transparent conductive film for changing a structure of the transparent conductive film on first photoresist differently from the transparent conductive film of any other areas to control etching selection rates differently, thereby simplifying the etching and patterning the transparent conductive film without short or open failure. A fabricating method of a thin film transistor array substrate includes a first conductive pattern forming step, a hole forming step, a second conductive pattern forming step, and a third conductive pattern forming step. The first conductive pattern includes gate lines(120) connected to gate electrodes and gate and data pad lower electrodes(181,191) formed on a substrate(110) through a first mask. In the hole forming step, a gate insulating film and a semiconductor layer are formed on the substrate in sequence, first and second contact holes are formed by penetrating the gate insulating film and the semiconductor layer to expose the gate and data pad lower electrodes by using a first photoresist pattern formed through a second mask, wherein pixel holes are formed by exposing the substrate through the gate insulating film and the semiconductor layer. The second conductive pattern includes pixel electrodes(160), and gate and data pad upper electrodes(182,192) formed by exposing and removing a transparent conductive film formed on the first photoresist pattern by using a second photoresist pattern, which is formed by etching, after forming the transparent conductive film on the first and second contact holes, the pixel holes and the first photoresist pattern. The third conductive pattern includes a semiconductor pattern for forming channels, data lines(130) connected to source electrodes(132), and drain electrodes(133) facing the source electrodes via the channels, which are through a third mask. |
