CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD

摘要

A chemical mechanical polishing pad and a chemical mechanical polishing method are provided to improve polishing speed and in-plane uniformity of the amount of polishing at a surface to be polished, even when the supply amount of an aqueous dispersion for chemical mechanical polishing is small. A chemical mechanical polishing pad(1) has a polishing surface and a non-polishing surface. The polishing surface includes a first groove group and a second groove group. The first groove group is constituted by a plurality of first grooves(3) intersecting a virtual line directed to the periphery from the center of the polishing surface. The first grooves do not intersect with each other, and have a land ratio of 6 to 30. The second groove group is constituted by a plurality of second grooves(2) intersecting the first grooves while extending in the direction from the center to the periphery of the surface to be polished. The second grooves include those contacting other second grooves in the region of the center and those which do not contact other second grooves in the region of the center. The second grooves do not intersect with each other.