METHOD FOR GAP-FILLING A INSULATING LAYER OF SEMICONDUCTOR DEVICE

摘要

A method for gap-filling an insulating layer of a semiconductor device is provided to reduce the aspect ratio of a space by removing easily an insulating layer from a spatial sidewall. A first insulating layer(23) is formed within a fully gap-filling range on the entire surface of a semiconductor substrate(20) including an underlayer. The underlayer is exposed by performing a CMP process for the first insulating layer. The remaining part of the first insulating layer is selectively removed from a sidewall in a space part which is not gap-filled with the first insulating layer. A second insulating layer(24) is formed on the underlayer to gap-fill the space part.