| 摘要 |
A method for forming an isolation layer in a semiconductor device is provided to form a voidless isolation layer by burying an SOD layer, an O3-TEOS layer or an HDP layer into trenches having dual slopes. A first trench(30) having a sloped lateral profile is formed by etching an isolation region of a semiconductor substrate(10). A second trench(40) having a perpendicular lateral profile is formed by etching the substrate corresponding to a bottom surface of the first trench. A floating insulating layer(50) is buried into the second trench. An insulating layer(60) is buried into the first trench. The trench is formed obliquely in an angle range of 80 to 86 degrees.
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