| 摘要 |
A method for fabricating a metal line of a semiconductor device is provided to restrain a reaction between a metal layer and etching reactive gas and to improve a profile of the metal line by controlling a ratio of chlorine gas and boron chloride, and power. A substrate(110) having an interlayer dielectric is prepared. A metal layer is formed on the interlayer dielectric. The metal layer is selectively etched by a first etching gas to form a metal line(121). The first etching gas is a mixture gas of Cl2, BCl3, and N2. The metal line is further etched by 20 to 40% using the first etching gas. The interlayer dielectric around the metal line is etched by using a second etching gas. The second etching gas is a mixture gas of Cl2 and BCl3.
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