发明名称 LED HAVING VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要 A vertically structured light emitting device and a manufacturing method thereof are provided to improve crystallization of a thin film and internal quantum efficiency by selectively growing the thin film on a surface where pillars are formed. Plural pillars(20) are formed on a substrate. Plural semiconductor layers(30) are formed on a surface where the pillars are formed. A first electrode(40) is formed on the semiconductor layers. A supporting layer(60) is formed on the first electrode. The substrate is removed. A second electrode(70) is formed on a surface whose substrate is removed. The substrate is one of sapphire, Si, ZnO, and Sic. The pillars are regularly arranged. The height of the pillar is 0.05 to 10 mum, a radius thereof is 0.01 to 6 mum, and an interval between the pillars is 0.03 to 18 mum.
申请公布号 KR100734375(B1) 申请公布日期 2007.07.03
申请号 KR20060025692 申请日期 2006.03.21
申请人 LG ELECTRONICS INC.;LG INNOTEK CO., LTD. 发明人 MOON, YONG TAE;JANG, JUN HO
分类号 H01L33/12;H01L33/16 主分类号 H01L33/12
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