| 摘要 |
An image sensor and its manufacturing method are provided to shorten a focus distance between a photodiode and a microlens by forming the microlens composed of a color filter layer. Plural photodiodes and various transistors are formed on a semiconductor substrate, and an interlayer dielectric(211) is formed on the entire surface of the semiconductor substrate. A microlens(215) is formed on the interlayer dielectric at a position corresponding to each photodiode, and the surface of the microlens is reflow-treated. The microlens is composed of R, G and B color filters which are formed in different regions.
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