METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to restrain the increase of resistance of a metal line and to prevent the increase of leakage current by preventing atoms of an interlayer dielectric from diffusing into a metal line using a diffusion barrier. A semiconductor element and a lower metal line connected to the semiconductor element are formed on a semiconductor substrate(100). An interlayer dielectric is formed on the resultant structure. A contact hole for opening the lower metal line is formed through the interlayer dielectric. A diffusion barrier(120) is selectively formed on the interlayer dielectric including the contact hole by performing a heat treatment under an NO gas condition. The diffusion barrier is made of a silicon oxynitride layer. A contact electrode and an upper metal line are formed in the contact hole.