| 摘要 |
Polishing uniformity in a CMP process may be improved due to an improvement in the temperature uniformity of a polishing surface, when a wafer is polished by a CMP apparatus including a polishing head for holding the wafer, a platen, a polishing pad at a top of the platen so as to polish the wafer, and a heat conduction medium on or in the polishing pad and configured to diffuse heat of the polishing pad such that the temperature distribution of the polishing pad may become substantially uniform.
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