发明名称 |
METHOD FOR FABRICATING METAL-INSULATOR-METAL CAPACITOR IN SEMICONDUCTOR DEVICE |
摘要 |
A method for forming an MIM(Metal Insulator Metal) capacitor in a semiconductor device is provided to remove stably re-sputtered metallic grains due to an etching process for a lower electrode for a capacitor by using a polymer layer capable of making the metallic grains deposited on the polymer layer itself. A metal line and a lower electrode(131) for a capacitor are formed on a semiconductor substrate. An insulating layer and a metal film are sequentially formed on the lower electrode. A photoresist pattern(150) is formed on the resultant structure. A upper electrode(133) for a capacitor is formed on the resultant structure by etching selectively the metal film using the photoresist pattern as an etch mask. A polymer layer(151) is formed at a sidewall of the upper electrode. A capacitor insulating layer(132) is formed by etching the insulating layer using the photoresist pattern as an etch mask. Then, the polymer layer is removed from the upper electrode by a cleaning process.
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申请公布号 |
KR20070069450(A) |
申请公布日期 |
2007.07.03 |
申请号 |
KR20050131630 |
申请日期 |
2005.12.28 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE, KANG HYUN |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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