| 摘要 |
A method for forming a gate of a semiconductor device is provided to improve surface uniformity of a polysilicon layer and to prevent watermark on the polysilicon layer by etching the polysilicon layer using plasma dry etching. A groove(30) is formed by etching a substrate(10). A gate insulating layer(40) is formed on the groove. A polysilicon layer(50) is filled in the groove. The polysilicon layer is planarized by CMP. Plasma dry etching is then performed to obtain the surface uniformity of the polysilicon layer. A metal silicide layer(60) and a hard mask layer(70) are sequentially formed on the polysilicon layer.
|
