| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent leaning of a gate by forming end portions of the gate to have an annular bending shape for improving uniformity of a re-oxidation process. A gate insulating layer, a polysilicon layer, a metal silicide layer, and a hard mask are sequentially formed on a semiconductor substrate(21). A gate(26) is formed by etching the hard mask, the metal silicide layer, the polysilicon layer and a gate insulating layer. A re-oxidation process is performed to cure the etch damage layer. At this time, the gate is formed to have an annular bending shape, thereby improving the uniformity of the re-oxidation process.
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