| 摘要 |
A self refresh control circuit of a semiconductor memory device is provided to reduce current consumption of the memory device at a low temperature by varying a self refresh period based on a detected temperature. A self refresh control circuit of a semiconductor memory device includes a counter(20), a temperature detector, and an output unit(70). The counter counts the number of clock signals having the same period and outputs plural count signals. The temperature detector detects the variation in the self refresh period according to the temperature variation at predetermined time intervals, and outputs a control signal corresponding to the variation. The temperature detector delivers the count signal corresponding to the current temperature according to the control signal. The output unit receives the count signal from the temperature detector and outputs a self refresh pulse signal every self refresh period. The temperature detector includes a timer(30), a temperature-sensitive delay unit(40), a pulse generator(50), a controller(60), and a signal delivery unit.
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