发明名称 |
Heat removal in SOI devices using a buried oxide layer/conductive layer combination |
摘要 |
A method of forming a silicon-on-insulator substrate is disclosed, including providing a silicon substrate; depositing a first insulation layer over the silicon substrate; forming a conductive layer over the first insulation layer to a first structure; providing a second structure comprising a silicon device layer and a second insulation layer; bonding the first structure and the second structure together so that the conductive layer is located between the first and second insulation layers; and removing a portion of the silicon device layer thereby providing the silicon-on-insulator substrate having two discrete insulation layers. In one embodiment, the method further includes forming at least one conductive plug through the silicon substrate and the first insulation layer and/or the second insulation layer so as to contact the conductive layer. Methods of facilitating heat removal from the device layer are disclosed.
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申请公布号 |
US7238591(B1) |
申请公布日期 |
2007.07.03 |
申请号 |
US20040973871 |
申请日期 |
2004.10.26 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIN MING-REN |
分类号 |
H01L21/84;H01L21/762;H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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