| 摘要 |
A TFT(Thin Film Transistor), a method for manufacturing the TFT, an LCD(Liquid Crystal Display) having the TFT, and a method for manufacturing the LCD are provided to form nano wires between source and drain electrodes by using the source and drain electrodes as electrodeposition electrodes, thereby improving contact characteristic of transistor electrodes and the nano wires and enhancing production yield. A TFT includes a gate electrode(63), a porous block(53) formed under the gate electrode, and source and drain electrodes(61,51). The porous block includes a plurality of tunnels. The source and drain electrodes are respectively formed at both sides of the porous block. The TFT further includes an insulating layer(52) formed between the gate electrode and the porous block. Nano wires(65) are formed in the plurality of tunnels by using ZnO. Ohmic contact layers(66) are formed in regions of the source and drain electrodes, which come into contact with the nano wires.
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