METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING PLASMA DOPING

摘要

A method for fabricating a semiconductor device using plasma doping is provided to prevent a doped region from being diffused outwardly from gate polycrystalline silicon layer by positioning the doped region in the gate polycrystalline silicon layer. A gate oxide layer(23) is formed on a semiconductor substrate(21), and a first gate polycrystalline silicon layer(24a) is formed on the gate oxide layer. The first gate polycrystalline silicon layer is doped with dopant through plasma doping. A second gate polycrystalline silicon layer(24b) is formed on the first gate polycrystalline silicon layer. An annealing process is performed on the substrate to activate the dopant doped in the first gate polycrystalline silicon layer. A gate metal layer is formed on the second gate polycrystalline silicon layer.