SEMICONDUCTOR PROCESS OF SHALLOW TRENCH ISOLATION IN SEMICONDUCTOR DEVICE

摘要

A semiconductor process of a shallow trench isolation in a semiconductor device is provided to improve uniformity of layer quality by analyzing the quantitative relationship between an STI oxide layer and an STI-FILL oxide layer. An oxide layer and a nitride layer are formed on an upper surface of a wafer and a trench is formed by patterning the nitride layer and the oxide layer(S10). An STI liner oxide layer is formed on an inner wall of the trench(S20). Only an upper surface of the wafer is cleaned by using a predetermined solution(S30). An STI-FILL oxide layer is formed in the trench(S40). An analysis process is performed to analyze relationship between the STI oxide layer and the STI-FILL oxide layer.