| 摘要 |
A transistor and a method for forming the same are provided to compensate driving performance and characteristic by compensating the damage of active regions of an NMOS transistor and a PMOS transistor in an STI process. An STI(32) for isolation is formed on a periphery of a semiconductor region of a semiconductor substrate. An active region(30) including a source region(30a) and a drain region(30b) is formed on the semiconductor substrate separated by the STI. A gate(38) is formed between the source and the drain of the active region of the semiconductor substrate. The gate includes a straight line pattern positioned between the source region and the drain region and an extended pattern(38a,38b,38c,38d) formed at a position corresponding to at least one of edges of the active region corresponding to a longitudinal direction of the straight line pattern.
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