| 摘要 |
A semiconductor memory device and a method for driving a bit line sense amplifier are provided to raise a voltage level of a bit line pair by increasing a core voltage during a write recovery process. A bit line sense amplifier(407) includes a pull-up voltage line and a pull-down voltage line and amplifies the data on a bit line pair. A bank controller(401) receives an active command and a precharge command and generates first and second sense amplifier enable signals. A sense amplifier power line driving controller(403) generates an over-driving control signal and a normal driving control signal in response to an enable signal and a test signal of the first and second sense amplifiers. A first driver drives a pull-up power line of the bit line sense amplifier using an over driving voltage in response to the over driving control signal. A second driver drives the pull-up power line of the bit line sense amplifier using a normal driving voltage in response to the normal driving control signal. During a test mode, the pull-up voltage line of the bit line sense amplifier is over-driven at initial and final phases of the first sense amplifier enable signal. During a normal mode, the pull-up voltage line is over-driven at the initial phase of the first sense amplifier enable signal.
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