| 摘要 |
A method for manufacturing a copper line of a semiconductor device is provided to improve characteristics of the device by preventing the generation of a copper oxide layer on a first copper film using a mixed solution of CH3 and CH3COCH3. An insulating pattern for exposing partially a first copper film is formed by etching selectively an insulating layer. A cleaning process is performed on the exposed first copper film by using a mixed solution of CH3 and CH3COCH3, so that the generation of a copper oxide layer is restrained on the first copper film(109). A barrier metal is formed on the insulating pattern(111). A second copper film is formed on the barrier metal.
|
