| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to easily connect to signals between an image sensor of an upper portion of a semiconductor device and a device of a lower portion thereof by using first and second through-electrodes. A photo diode region and a transistor region are formed on a semiconductor substrate(200). A PMD(Pre Metal Dielectric) layer(210) is formed on the semiconductor substrate. Metal layers(220,230,240) are formed on the PMD layer. A first through-electrode(215) is formed by passing through the PMD layer and the metal layer. A second-electrode(225) is formed by passing through the semiconductor substrate and connected to the first through-electrode. The first and second through-electrodes are made of one or more material selected from W, Cu, Al, Ag, and Au.</p> |
