发明名称 CLOCK GENERATOR OF SEMICONDUCTOR MEMORY
摘要 A clock generator of a semiconductor memory device is provided to generate a reliable clock by performing phase and duty cycle compensation using divided clocks. A first frequency divider(110) divides a first internal clock by using an external clock. A first delay unit(120) delays an output from the first frequency divider by a predetermined time. A second frequency divider(140) divides a second internal clock by using the external clock. A second delay unit(150) delays an output from the second frequency divider by a predetermined time. A duty cycle compensator(160) compensates for first and second delay units and outputs first and second compensation clocks. A phase splitter(170) separates the first compensation clock from the second compensation clock and outputs the result. A third frequency divider(180) divides the first compensation clock. A third delay unit(190) delays the output from the third frequency divider by a predetermined time. A phase comparator(200) compares the outputs from the third delay unit and the first frequency divider with each other and outputs the result. A delay unit setter(220) sets the delay time for the first and second delay units according to the output from the phase comparator.
申请公布号 KR20070069385(A) 申请公布日期 2007.07.03
申请号 KR20050131432 申请日期 2005.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, HYUN WOO
分类号 G11C7/22;G11C8/18;G11C11/4076 主分类号 G11C7/22
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