| 摘要 |
A method for fabricating a flash memory is provided to prevent a control gate from being damaged by forming a protection layer on the control gate. A trench(201) is formed in a inactive region, and an isolation film(202) is formed in the trench. A well is formed in an active region. A tunnel oxide layer(203), a first polycrystalline silicon layer, an interlayer dielectric, a second polycrystalline silicon layer, and an oxide layer are sequentially formed on the entire surface of the substrate, and then are patterned to form a floating gate(204), a dielectric film(205), a control gate(206) and a protection layer(207). A photoresist pattern is formed on the entire surface to expose the protection layer and the inactive region.
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