METHOD FOR MANUFACTURING METAL LINE AND INTERMETAL DIELECTRIC LAYER

摘要

A manufacturing method of a metal wiring and an interlayer dielectric is provided to reduce void and clipping phenomenon when depositing the interlayer dielectric through HDPCVD by appending a dummy wiring into a region where the metal wiring is formed with high density and low density. A semiconductor device and a lower interlayer dielectric are formed on a semiconductor substrate(100). A metal wiring having a high density wiring region(120) and a low density wiring region(140) is formed on the lower interlayer dielectric, and a dummy wiring(108) is formed between the high and low wiring regions. An upper interlayer dielectric(106) is formed on the lower interlayer dielectric by performing HDPCVD.